IXTY01N100-TRL vs IXTY01N100 vs IXTY01N100D

 
PartNumberIXTY01N100-TRLIXTY01N100IXTY01N100D
DescriptionDiscrete Semiconductor Modules High Voltage Power MOSFETMOSFET 0.1 Amps 1000V 80 RdsMOSFET N-CH 1000V 0.1A TO-252AA
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesMOSFETFETs - Single
RoHSYY-
ProductPower MOSFET Modules--
TypeHigh Voltage--
Vgs Gate Source Voltage20 V20 V-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelTubeBulk
ConfigurationSingleSingle-
BrandIXYSIXYS-
Transistor PolarityN-ChannelN-Channel-
Fall Time28 ns28 ns-
Id Continuous Drain Current100 mA100 mA-
Pd Power Dissipation25 W25 W-
Product TypeDiscrete Semiconductor ModulesMOSFET-
Rds On Drain Source Resistance80 Ohms80 Ohms-
Rise Time12 ns12 ns-
Factory Pack Quantity250070-
SubcategoryDiscrete Semiconductor ModulesMOSFETs-
Typical Turn Off Delay Time40 ns28 ns-
Typical Turn On Delay Time12 ns12 ns-
Vds Drain Source Breakdown Voltage1000 V1 kV-
Vgs th Gate Source Threshold Voltage2 V--
Technology-Si-
Number of Channels-1 Channel-
Channel Mode-Enhancement-
Height-2.38 mm-
Length-6.73 mm-
Series-IXTY01N100319
Transistor Type-1 N-Channel-
Width-6.22 mm-
Forward Transconductance Min-160 mS-
Unit Weight-0.012346 oz-
Part Status--Active
Connector Type--Mating Target
Number of Contacts--62
Pitch--0.100" (2.54mm)
Number of Rows--1
Row Spacing---
Mounting Type--Through Hole
Material--Brass Alloy
Contact Finish--Gold
Contact Finish Thickness--10in (0.25m)
Top