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| PartNumber | IXTY01N100D-TRL | IXTY01N100D | IXTY01N100D TR |
| Description | Discrete Semiconductor Modules High Voltage Power MOSFET | MOSFET N-CH 1000V 0.1A TO-252AA | IXTY01N100D TR |
| Manufacturer | IXYS | IXYS | - |
| Product Category | Discrete Semiconductor Modules | FETs - Single | - |
| RoHS | Y | - | - |
| Product | Power MOSFET Modules | - | - |
| Type | High Voltage | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Reel | Bulk | - |
| Configuration | Single | - | - |
| Brand | IXYS | - | - |
| Transistor Polarity | N-Channel | - | - |
| Fall Time | 64 ns | - | - |
| Id Continuous Drain Current | 400 mA | - | - |
| Pd Power Dissipation | 25 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rds On Drain Source Resistance | 80 Ohms | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Typical Turn Off Delay Time | 34 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1000 V | - | - |
| Vgs th Gate Source Threshold Voltage | - 4.5 V | - | - |
| Series | - | 319 | - |
| Part Status | - | Active | - |
| Connector Type | - | Mating Target | - |
| Number of Contacts | - | 62 | - |
| Pitch | - | 0.100" (2.54mm) | - |
| Number of Rows | - | 1 | - |
| Row Spacing | - | - | - |
| Mounting Type | - | Through Hole | - |
| Material | - | Brass Alloy | - |
| Contact Finish | - | Gold | - |
| Contact Finish Thickness | - | 10in (0.25m) | - |