IXXH110N65B4 vs IXXH100N60B3 vs IXXH100N60C3

PartNumber	IXXH110N65B4	IXXH100N60B3	IXXH100N60C3
Description	Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD	IGBT Transistors XPT IGBT B3-Class 600V/210Amp	IGBT Transistors XPT IGBT C3-Class 600V/190Amp
Manufacturer	IXYS	IXYS	IXYS
Product Category	Discrete Semiconductor Modules	IGBT Transistors	IGBT Transistors
RoHS	Y	Y	Y
Product	Power Semiconductor Modules	-	-
Type	GenX4	-	-
Vgs Gate Source Voltage	20 V	-	-
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-247-3	TO-247AD	TO-247AD
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 150 C	+ 150 C
Packaging	Tube	Tube	Tube
Configuration	Single	-	-
Brand	IXYS	IXYS	IXYS
Transistor Polarity	N-Channel	-	-
Fall Time	43 ns	-	-
Id Continuous Drain Current	250 A	-	-
Pd Power Dissipation	880 W	830 W	830 W
Product Type	Discrete Semiconductor Modules	IGBT Transistors	IGBT Transistors
Rise Time	40 ns	-	-
Factory Pack Quantity	30	30	30
Subcategory	Discrete Semiconductor Modules	IGBTs	IGBTs
Tradename	XPT	XPT	XPT
Typical Turn Off Delay Time	146 ns	-	-
Typical Turn On Delay Time	26 ns	-	-
Vds Drain Source Breakdown Voltage	650 V	-	-
Vgs th Gate Source Threshold Voltage	4 V	-	-
Technology	-	Si	Si
Collector Emitter Voltage VCEO Max	-	600 V	600 V
Collector Emitter Saturation Voltage	-	1.8 V	2.2 V
Maximum Gate Emitter Voltage	-	20 V	20 V
Continuous Collector Current at 25 C	-	210 A	190 A
Series	-	IXXH100N60	IXXH100N60
Gate Emitter Leakage Current	-	100 nA	100 nA
Unit Weight	-	0.229281 oz	0.229281 oz