KSP06TA vs KSP06 vs KSP06B

 
PartNumberKSP06TAKSP06KSP06B
DescriptionBipolar Transistors - BJT NPN Si Transistor EpitaxialBipolar Transistors - BJT NPN/80V/0.5A/50
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-92-3 Kinked Lead--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.25 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesKSP06--
Height4.7 mm--
Length4.7 mm--
PackagingAmmo Pack--
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.008466 oz--
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