MII150-12A4 vs MII100-12A3 vs MII145-12A3

 
PartNumberMII150-12A4MII100-12A3MII145-12A3
DescriptionDiscrete Semiconductor Modules 150 Amps 1200VDiscrete Semiconductor Modules IGBT MODULE 1200V, 100AMOD IGBT RBSOA 1200V 160A Y4-M5
ManufacturerIXYSIXYSIXYS
Product CategoryDiscrete Semiconductor ModulesDiscrete Semiconductor ModulesModule
RoHSYY-
ProductPower Semiconductor ModulesPower Semiconductor Modules-
TypeIGBT ModuleIGBT Module-
Vf Forward Voltage2.3 V2.2 V-
Mounting StyleScrew MountScrew Mount-
Package / CaseY3-DCBY4-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
SeriesMII150MII100-
PackagingBulkBulk-
ConfigurationDualDualHalf Bridge
BrandIXYSIXYS-
Product TypeDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
Factory Pack Quantity26-
SubcategoryDiscrete Semiconductor ModulesDiscrete Semiconductor Modules-
Vr Reverse Voltage-1.2 kV-
Unit Weight-3.880136 oz-
Package Case--Y4-M5
Mounting Type--Chassis Mount
Supplier Device Package--Y4-M5
Input--Standard
Power Max--700W
Current Collector Ic Max--160A
Voltage Collector Emitter Breakdown Max--1200V
Current Collector Cutoff Max--6mA
IGBT Type--NPT
Vce on Max Vge Ic--2.7V @ 15V, 100A
Input Capacitance Cies Vce--6.5nF @ 25V
NTC Thermistor--No
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