MJD210TF vs MJD210 vs MJD210-1

 
PartNumberMJD210TFMJD210MJD210-1
DescriptionBipolar Transistors - BJT PNP Si Transistor EpitaxialTRANS PNP 25V 5A DPAK
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSE--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max25 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO- 8 V--
Maximum DC Collector Current5 A--
Gain Bandwidth Product fT65 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD210--
DC Current Gain hFE Max180--
Height6.1 mm--
Length6.6 mm--
PackagingReel--
Width2.3 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 5 A--
DC Collector/Base Gain hfe Min45--
Pd Power Dissipation12.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.009184 oz--
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