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MMBT3904L RFG vs MMBT3904L RF vs MMBT3904L

 
PartNumberMMBT3904L RFGMMBT3904L RFMMBT3904L
DescriptionBipolar Transistors - BJT 0,3mW NPN TransistorBipolar Transistors - BJT 0,3mW NPN Transistor200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
ManufacturerTaiwan SemiconductorTaiwan SemiconductorDIODEZETEX
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
SeriesMMBT390MMBT390MMBT39
PackagingReelReelReel
BrandTaiwan SemiconductorTaiwan Semiconductor-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight--0.000282 oz
Mounting Style--SMD/SMT
Package Case--SOT-23-3
Configuration--Single
Pd Power Dissipation--350 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--40 V
Transistor Polarity--NPN
Collector Emitter Saturation Voltage--0.3 V
Collector Base Voltage VCBO--60 V
Emitter Base Voltage VEBO--6 V
Maximum DC Collector Current--0.2 A
Gain Bandwidth Product fT--300 MHz
Continuous Collector Current--0.2 A
DC Collector Base Gain hfe Min--100 at 10 mA at 1 V
DC Current Gain hFE Max--300 at 10 mA at 1 V
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