MMBT4124-7-F vs MMBT4124-7 vs MMBT4124

 
PartNumberMMBT4124-7-FMMBT4124-7MMBT4124
DescriptionBipolar Transistors - BJT 25V 300mWBipolar Transistors - BJT 25V 300mWTRANS NPN 25V 0.2A SOT23
ManufacturerDiodes IncorporatedDiodes IncorporatedFairchild Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max25 V25 V-
Collector Base Voltage VCBO30 V30 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.3 V-0.3 V
Maximum DC Collector Current0.2 A0.2 A0.2 A
Gain Bandwidth Product fT300 MHz300 MHz300 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMMBT41MMBT4124-
DC Current Gain hFE Max360360360
Height1 mm1 mm-
Length3.05 mm3.05 mm-
PackagingReelReelDigi-ReelR Alternate Packaging
Width1.4 mm1.4 mm-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current0.2 A0.2 A0.2 A
DC Collector/Base Gain hfe Min120120-
Pd Power Dissipation300 mW300 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz0.002116 oz
Part Aliases--MMBT4124_NL
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23-3
Power Max--350mW
Transistor Type--NPN
Current Collector Ic Max--200mA
Voltage Collector Emitter Breakdown Max--25V
DC Current Gain hFE Min Ic Vce--120 @ 2mA, 1V
Vce Saturation Max Ib Ic--300mV @ 5mA, 50mA
Current Collector Cutoff Max--50nA (ICBO)
Frequency Transition--300MHz
Pd Power Dissipation--350 mW
Collector Emitter Voltage VCEO Max--25 V
Collector Base Voltage VCBO--30 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--120
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