MMBTH81 vs MMBTH81 AOQ vs MMBTH81 3D Y

 
PartNumberMMBTH81MMBTH81 AOQMMBTH81 3D Y
DescriptionRF Bipolar Transistors PNP RF Transistor
ManufacturerON Semiconductor--
Product CategoryRF Bipolar Transistors--
RoHSY--
SeriesMMBTH81--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityPNP--
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max20 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.05 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-23--
PackagingReel--
Collector Base Voltage VCBO20 V--
DC Current Gain hFE Max60 at 5 mA at 10 V--
Height0.93 mm--
Length2.92 mm--
Operating Frequency600 MHz--
TypeRF Bipolar Small Signal--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Gain Bandwidth Product fT600 MHz (Min)--
Maximum DC Collector Current0.05 A--
Pd Power Dissipation225 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # AliasesMMBTH81_NL--
Unit Weight0.000282 oz--
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