MPQ6002 vs MPQ6001 vs MPQ6100

 
PartNumberMPQ6002MPQ6001MPQ6100
DescriptionBipolar Transistors - BJT Quad NPN/PNP
ManufacturerCentral Semiconductor-Central Semiconductor Corp
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Arrays
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-116--
Transistor PolarityNPN, PNP--
ConfigurationQuad--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum DC Collector Current500 mA--
Gain Bandwidth Product fT200 MHz--
Maximum Operating Temperature+ 150 C--
SeriesMPQ6-MPQ61
Height0.6 mm--
Length19.3 mm--
PackagingTube-Tube
Width6.6 mm--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min30 at 1 mA, 10 V--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity25--
SubcategoryTransistors--
Part # AliasesMPQ6002 PBFREE--
Unit Weight0.014110 oz--
Package Case--14-DIP (0.300", 7.62mm)
Mounting Type--Through Hole
Supplier Device Package--TO-116
Power Max--3W
Transistor Type--2 NPN, 2 PNP
Current Collector Ic Max---
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce---
Vce Saturation Max Ib Ic---
Current Collector Cutoff Max--10nA (ICBO)
Frequency Transition--50MHz
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