NTLJS1102PTBG vs NTLJS1102PTAG vs NTLJS2103P

 
PartNumberNTLJS1102PTBGNTLJS1102PTAGNTLJS2103P
DescriptionMOSFET PFET WDFN6 8V 8.1A 36mOhmMOSFET P-CH 8V 3.7A 6-WDFN
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseWDFN-6--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage8 V--
Id Continuous Drain Current8.1 A--
Rds On Drain Source Resistance36 mOhms--
Vgs Gate Source Voltage6 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.75 mm--
Length2 mm--
Transistor Type1 P-Channel--
Width2 mm--
BrandON Semiconductor--
Fall Time70 ns--
Product TypeMOSFET--
Rise Time41 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time80 ns--
Typical Turn On Delay Time8 ns--
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