NTMD2C02R2G vs NTMD2C02R2 vs NTMD2C02R2G / D2C02

 
PartNumberNTMD2C02R2GNTMD2C02R2NTMD2C02R2G / D2C02
DescriptionMOSFET 20V 5.2A ComplementaryMOSFET N/P-CH 20V 8SOIC
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current5.2 A--
Rds On Drain Source Resistance43 mOhms, 100 mOhms--
Vgs Gate Source Voltage12 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
Transistor Type1 N-Channel, 1 P-Channel--
TypeMOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min3 S--
Fall Time80 ns, 35 ns--
Product TypeMOSFET--
Rise Time50 ns, 40 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time45 ns, 35 ns--
Typical Turn On Delay Time12 ns, 15 ns--
Unit Weight0.006596 oz--
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