NTMFS4925NT1G vs NTMFS4925NET1G vs NTMFS4925N

 
PartNumberNTMFS4925NT1GNTMFS4925NET1GNTMFS4925N
DescriptionMOSFET TRENCH 3.1 30V 6 M Ohm NCHMOSFET NFET S08FL 30V 48A 6MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current16.7 A48 A-
Rds On Drain Source Resistance10 mOhms6.4 mOhms-
Vgs th Gate Source Threshold Voltage1.7 V1.7 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge10.8 nC10.8 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation23.2 W23.2 W-
ConfigurationSingleSingleSingle
PackagingReelReelReel
SeriesNTMFS4925N--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min52 s52 S-
Product TypeMOSFETMOSFET-
Factory Pack Quantity15001500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.003781 oz--
Fall Time-6.2 ns6.2 ns
Moisture Sensitive-Yes-
Rise Time-32.7 ns32.7 ns
Typical Turn Off Delay Time-16.4 ns16.4 ns
Typical Turn On Delay Time-9.5 ns9.5 ns
Package Case--SO-8FL
Pd Power Dissipation--23.2 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--48 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.7 V
Rds On Drain Source Resistance--6.4 mOhms
Qg Gate Charge--10.8 nC
Forward Transconductance Min--52 S
Top