PD85015-E vs PD85015 vs PD85015S-E

 
PartNumberPD85015-EPD85015PD85015S-E
DescriptionRF MOSFET Transistors POWER R.F. N-Ch TransRF MOSFET Transistors POWER R.F. N-Ch Trans
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryRF MOSFET Transistors-Transistors - FETs, MOSFETs - Single
RoHSY--
Transistor PolarityN-Channel-N-Channel
TechnologySi-Si
Id Continuous Drain Current5 A--
Vds Drain Source Breakdown Voltage40 V--
Gain16 dB-16 dB at 870 MHz
Output Power15 W-15 W
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerSO-10RF-Formed-4--
PackagingTube-Tube
ConfigurationSingle--
Height3.5 mm--
Length7.5 mm--
Operating Frequency1 GHz-1 GHz
SeriesPD85015-E-PD85015-E
TypeRF Power MOSFET-RF Power MOSFET
Width9.4 mm--
BrandSTMicroelectronics--
Channel ModeEnhancement--
Moisture SensitiveYes--
Pd Power Dissipation59 W--
Product TypeRF MOSFET Transistors--
Factory Pack Quantity400--
SubcategoryMOSFETs--
Vgs Gate Source Voltage15 V--
Unit Weight0.105822 oz--
Package Case--PowerSO-10RF (Straight lead)-4
Pd Power Dissipation--59 W
Vgs Gate Source Voltage--15 V
Id Continuous Drain Current--5 A
Vds Drain Source Breakdown Voltage--40 V
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