PMDPB55XP,115 vs PMDPB55XP vs PMDPB56XN

 
PartNumberPMDPB55XP,115PMDPB55XPPMDPB56XN
DescriptionMOSFET 20V, Dual P-Channel Trench MOSFET
ManufacturerNexperiaNXP Semiconductors-
Product CategoryMOSFETFETs - Arrays-
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance55 mOhms--
Vgs th Gate Source Threshold Voltage650 mV--
Qg Gate Charge16.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.3 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Transistor Type2 P-Channel--
BrandNexperia--
Fall Time68 ns--
Product TypeMOSFET--
Rise Time14 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time135 ns--
Typical Turn On Delay Time4 ns--
Unit Weight0.000254 oz--
Series---
Package Case-6-UDFN Exposed Pad-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-6-HUSON (2x2)-
FET Type-2 P-Channel (Dual)-
Power Max-490mW-
Drain to Source Voltage Vdss-20V-
Input Capacitance Ciss Vds-785pF @ 10V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3.4A-
Rds On Max Id Vgs-70 mOhm @ 3.4A, 4.5V-
Vgs th Max Id-900mV @ 250μA-
Gate Charge Qg Vgs-25nC @ 5V-
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