R6004END3TL1 vs R6004ENDTL vs R6004END

 
PartNumberR6004END3TL1R6004ENDTLR6004END
DescriptionMOSFET NCH 600V 4A POWER MOSFETMOSFET 10V Drive Nch MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current4 A4 A-
Rds On Drain Source Resistance980 mOhms980 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge15 nC15 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation59 W20 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-channel-
BrandROHM SemiconductorROHM Semiconductor-
Fall Time40 ns40 ns-
Product TypeMOSFETMOSFET-
Rise Time22 ns22 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time55 ns55 ns-
Typical Turn On Delay Time22 ns22 ns-
Height-2.5 mm-
Length-6.7 mm-
Product-MOSFET-
Type-Power MOSFET-
Width-5.8 mm-
Forward Transconductance Min-1.5 S-
Part # Aliases-R6004END-
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