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| PartNumber | R6020ENZC8 | R6020ENZ1C9 | R6020ENZ |
| Description | MOSFET 10V Drive Nch MOSFET | MOSFET 10V Drive Nch MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-3PF-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 20 A | 20 A | - |
| Rds On Drain Source Resistance | 170 mOhms | 170 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 60 nC | 60 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 120 W | 120 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | Super Junction-MOS EN | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 5 S | 5 S | - |
| Fall Time | 67 ns | 67 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 53 ns | 53 ns | - |
| Factory Pack Quantity | 360 | 450 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 150 ns | 150 ns | - |
| Typical Turn On Delay Time | 35 ns | 35 ns | - |
| Part # Aliases | R6020ENZ | R6020ENZ1 | - |
| Unit Weight | 0.000353 oz | 0.000353 oz | - |