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| PartNumber | R6076ENZ1C9 | R6076ENZ4C13 | R6076ENZ1 |
| Description | MOSFET 10V Drive Nch MOSFET | MOSFET NCH 600V 76A POWER MOSFET | |
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 76 A | 76 A | - |
| Rds On Drain Source Resistance | 38 mOhms | 42 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 260 nC | 260 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 120 W | 735 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | ROHM Semiconductor | - |
| Forward Transconductance Min | 22.5 S | - | - |
| Fall Time | 170 ns | 170 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 170 ns | 170 ns | - |
| Factory Pack Quantity | 450 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 450 ns | 450 ns | - |
| Typical Turn On Delay Time | 65 ns | 65 ns | - |
| Part # Aliases | R6076ENZ1 | - | - |
| Unit Weight | 0.000353 oz | - | - |