 |  | | |
| PartNumber | RF4E080BNTR | RF4E080BN | RF4E080BN TB |
| Description | MOSFET 4.5V Drive Nch MOSFET | ||
| Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | DFN2020-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 8 A | - | - |
| Rds On Drain Source Resistance | 17.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 14.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Single | Single | - |
| Packaging | Reel | Reel | - |
| Series | RF4E080BN | RF4E080BN | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ROHM Semiconductor | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 7 ns | 7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | 10 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | 33 ns | - |
| Typical Turn On Delay Time | 8 ns | 8 ns | - |
| Part # Aliases | RF4E080BN | - | - |
| Package Case | - | DFN2020-8 | - |
| Pd Power Dissipation | - | 2 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Rds On Drain Source Resistance | - | 17.6 mOhms | - |
| Qg Gate Charge | - | 14.5 nC | - |
| Forward Transconductance Min | - | 5 S | - |