RJH60T04DPQ-A1#T0 vs RJH60T4 vs RJH60T4DPQ

 
PartNumberRJH60T04DPQ-A1#T0RJH60T4RJH60T4DPQ
DescriptionIGBT Transistors IGBT 650V TO247A
ManufacturerRenesas Electronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247A-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.5 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation208.3 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max60 A--
BrandRenesas Electronics--
Gate Emitter Leakage Current+/- 1 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity1--
SubcategoryIGBTs--
Unit Weight0.211644 oz--
Top