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| PartNumber | RN1105MFV(TPL3) | RN1105MFV(TL3,T) | RN1105MFV |
| Description | Bipolar Transistors - Pre-Biased 100mA 50volts 3Pin 2.2K x 47Kohms | Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO | |
| Manufacturer | Toshiba | - | Toshiba |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | N | - | - |
| Configuration | Single | - | Single |
| Transistor Polarity | NPN | - | NPN |
| Typical Input Resistor | 2.2 kOhms | - | 2.2 kOhms |
| Typical Resistor Ratio | 0.047 | - | 0.047 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | 100 mA |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 150 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | RN1105 | - | - |
| Packaging | Reel | - | Reel |
| DC Current Gain hFE Max | 80 | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |
| Pd Power Dissipation | - | - | 150 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| DC Collector Base Gain hfe Min | - | - | 80 |