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| PartNumber | RN1130MFV(TPL3) | RN1130F | RN1130MFV |
| Description | Bipolar Transistors - Pre-Biased 50volts 100mA 3Pin 100Kohms x 100Kohms | ||
| Manufacturer | Toshiba | - | TOSHIBA |
| Product Category | Bipolar Transistors - Pre-Biased | - | Transistors (BJT) - Single, Pre-Biased |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 100 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | VESM-3 | - | - |
| DC Collector/Base Gain hfe Min | 100 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | RN1130MFV | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| DC Current Gain hFE Max | 100 | - | - |
| Emitter Base Voltage VEBO | 10 V | - | - |
| Height | 0.5 mm | - | - |
| Length | 1.2 mm | - | - |
| Operating Temperature Range | - 65 C to + 150 C | - | - |
| Type | NPN Epitaxial Silicon Transistor | - | - |
| Width | 0.8 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 8000 | - | - |
| Subcategory | Transistors | - | - |