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| PartNumber | RN2115MFV,L3F | RN2115MFV(TPL3) | RN2115MFV |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor | Bipolar Transistors - Pre-Biased -50volts 100mA 3Pin 2.2Kohms x 10Kohms | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Single | - | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 2.2 kOhms, 10 kOhms | 2.2 kOhms | - |
| Typical Resistor Ratio | 0.22 | 0.22 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-723-3 | - | - |
| DC Collector/Base Gain hfe Min | 50 | 50 | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - 50 V | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 150 mW | 150 mW | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | RN2115 | RN2115 | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 6 V | - 6 V | - |
| Brand | Toshiba | Toshiba | - |
| Number of Channels | 1 Channel | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Collector Base Voltage VCBO | - | - 50 V | - |
| Height | - | 1.2 mm | - |
| Length | - | 1.2 mm | - |
| Operating Temperature Range | - | - 65 C to + 150 C | - |
| Type | - | PNP Epitaxial Silicon Transistor | - |
| Width | - | 0.5 mm | - |