 |  | | |
| PartNumber | RN2116,LF(CT | RN2116 | RN2116LF(CTCT-ND |
| Description | Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor | ||
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Single, Pre-Biased | - |
| RoHS | Y | - | - |
| Transistor Polarity | PNP | PNP | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 0.47 | 0.47 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-416-3 | - | - |
| DC Collector/Base Gain hfe Min | 50 | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Continuous Collector Current | - 100 mA | - 100 mA | - |
| Pd Power Dissipation | 100 mW | - | - |
| Series | RN2116 | - | - |
| Packaging | Reel | Reel | - |
| Emitter Base Voltage VEBO | - 7 V | - | - |
| Brand | Toshiba | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Pd Power Dissipation | - | 150 mW | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 65 C | - |
| Collector Emitter Voltage VCEO Max | - | - 50 V | - |
| Emitter Base Voltage VEBO | - | - 7 V | - |
| DC Collector Base Gain hfe Min | - | 50 | - |