SIHA12N50E-E3 vs SIHA120N60E-GE3 vs SIHA12N60E

 
PartNumberSIHA12N50E-E3SIHA120N60E-GE3SIHA12N60E
DescriptionMOSFET 500V Vds 30V Vgs TO-220 FULLPAKMOSFET 650V Vds; 30V Vgs TO-220
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage550 V600 V-
Id Continuous Drain Current10.5 A25 A-
Rds On Drain Source Resistance380 mOhms120 mOhms-
Vgs th Gate Source Threshold Voltage4 V3 V-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge25 nC45 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation32 W34 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height15.49 mm--
Length10.41 mm--
SeriesEE-
Width4.7 mm--
BrandVishay / SiliconixVishay / Siliconix-
Fall Time12 ns33 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns65 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time29 ns31 ns-
Typical Turn On Delay Time13 ns19 ns-
Unit Weight0.211644 oz--
Transistor Type-1 N-Channel-
Forward Transconductance Min-6 S-
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