PartNumber | SQS415ENW-T1_GE3 | SQS411ENW-T1_GE3 | SQS410EN-T1-GE3 |
Description | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | MOSFET -40V Vds 20V Vgs POWERPAK 1212-8W | |
Manufacturer | Vishay | Vishay | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PowerPAK-1212-8W | PowerPAK-1212-8W | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 16 A | 16 A | - |
Rds On Drain Source Resistance | 16.1 mOhms | 27.3 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.5 V | 1.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 82 nC | 50 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 62.5 W | 53.6 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Transistor Type | 1 P-Channel TrenchFET Power MOSFET | 1 P-Channel TrenchFET Power MOSFET | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | - |
Forward Transconductance Min | 30 S | 23 S | - |
Fall Time | 16 ns | 6.4 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 3.6 ns | 3 ns | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 64 ns | 39.6 ns | - |
Typical Turn On Delay Time | 11.8 ns | 10.5 ns | - |