STB18N60DM2 vs STB18N60M2 vs STB18N60DM2-CUT TAPE

 
PartNumberSTB18N60DM2STB18N60M2STB18N60DM2-CUT TAPE
DescriptionMOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a D2PAK packageMOSFET N-CH 600V 0.255Ohm 13A MDmesh M2
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current12 A13 A-
Rds On Drain Source Resistance260 mOhms255 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage25 V25 V-
Qg Gate Charge20 nC21.5 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation90 W110 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameMDmesh--
PackagingReelReel-
SeriesSTB18N60DM2STB18N60M2-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min---
Fall Time32.5 ns10.6 ns-
Product TypeMOSFETMOSFET-
Rise Time8 ns9 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time9.5 ns47 ns-
Typical Turn On Delay Time13.5 ns12 ns-
Unit Weight0.079014 oz0.139332 oz-
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