STB36N60M6 vs STB36NF02L vs STB36NF02LT4

 
PartNumberSTB36N60M6STB36NF02LSTB36NF02LT4
DescriptionMOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a D2PAK package
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseD2PAK-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance85 mOhms--
Vgs th Gate Source Threshold Voltage3.25 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge44.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation208 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
SeriesSTB36N60M6--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time7.3 ns--
Product TypeMOSFET--
Rise Time5.3 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50.2 ns--
Typical Turn On Delay Time15.2 ns--
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