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| PartNumber | STD35NF06 | STD35NF06L | STD35NF06LT |
| Description | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| Manufacturer | - | - | STMicroelectronics |
| Product Category | - | - | FETs - Single |
| Series | - | - | STripFET II |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | - | - | Si |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | D-Pak |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 80W |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 1700pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 35A (Tc) |
| Rds On Max Id Vgs | - | - | 17 mOhm @ 17.5A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 33nC @ 4.5V |
| Pd Power Dissipation | - | - | 80 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 20 ns |
| Rise Time | - | - | 100 ns |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 16 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 40 ns |
| Typical Turn On Delay Time | - | - | 20 ns |
| Forward Transconductance Min | - | - | 28 S |
| Channel Mode | - | - | Enhancement |