 |  | | |
| PartNumber | STF6N60DM2 | STF6N52K3 | STF6N60 |
| Description | MOSFET | MOSFET N-Ch 525V 1 Ohm 5A SuperMESH 3 PWR MO | |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| Technology | Si | Si | Si |
| Series | STF6N60DM2 | STP6N52K3 | MDmesh M2 |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| RoHS | - | Y | - |
| Mounting Style | - | Through Hole | Through Hole |
| Package / Case | - | TO-220-3 | - |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 525 V | - |
| Id Continuous Drain Current | - | 5 A | - |
| Rds On Drain Source Resistance | - | 1 Ohms | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 25 nC | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 25 W | - |
| Configuration | - | Single | Single |
| Packaging | - | Tube | Tube |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 18 ns | 22.5 ns |
| Rise Time | - | 11 ns | 7.4 nS |
| Typical Turn Off Delay Time | - | 31 ns | 24 ns |
| Typical Turn On Delay Time | - | 10 ns | 9.5 ns |
| Unit Weight | - | 0.011640 oz | 0.011640 oz |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 20 W |
| Vgs Gate Source Voltage | - | - | 25 V |
| Id Continuous Drain Current | - | - | 4.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 1.06 Ohms |
| Qg Gate Charge | - | - | 8 nC |