 |  | | |
| PartNumber | STGD6M65DF2 | STGD6N60 | STGD6NC60 |
| Description | IGBT Transistors PTD HIGH VOLTAGE | ||
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | IGBT Transistors | - | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | DPAK-3 | - | - |
| Mounting Style | SMD/SMT | - | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.55 V | - | 1.9 V |
| Maximum Gate Emitter Voltage | 20 V | - | +/- 20 V |
| Continuous Collector Current at 25 C | 12 A | - | 15 A |
| Pd Power Dissipation | 88 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 150 C |
| Series | STGD6M65DF2 | - | PowerMESH |
| Packaging | Reel | - | Tube |
| Continuous Collector Current Ic Max | 12 A | - | - |
| Brand | STMicroelectronics | - | - |
| Gate Emitter Leakage Current | +/- 250 uA | - | 100 nA |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | - | - | 0.139332 oz |
| Package Case | - | - | TO-251-3 Short Leads, IPak, TO-251AA |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | IPAK (TO-251) |
| Power Max | - | - | 62.5W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 15A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| IGBT Type | - | - | - |
| Current Collector Pulsed Icm | - | - | 21A |
| Vce on Max Vge Ic | - | - | 2.5V @ 15V, 3A |
| Switching Energy | - | - | 20μJ (on), 68μJ (off) |
| Gate Charge | - | - | 13.6nC |
| Td on off 25°C | - | - | 12ns/76ns |
| Test Condition | - | - | 390V, 3A, 10 Ohm, 15V |
| Pd Power Dissipation | - | - | 62.5 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |