STGD7NB60KT4 vs STGD7NB60HT4 vs STGD7NB60K

 
PartNumberSTGD7NB60KT4STGD7NB60HT4STGD7NB60K
DescriptionIGBT Transistors N-Ch 600 Volt 7 Amp
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-252-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2.8 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation70 W--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesSTGD7NB60K-PowerMESH
PackagingReel-Cut Tape (CT)
Continuous Collector Current Ic Max14 A--
Height2.4 mm--
Length6.6 mm--
Width6.2 mm--
BrandSTMicroelectronics--
Continuous Collector Current7 A--
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity2500--
SubcategoryIGBTs--
Unit Weight0.139332 oz--
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--70W
Reverse Recovery Time trr---
Current Collector Ic Max--14A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--56A
Vce on Max Vge Ic--2.8V @ 15V, 7A
Switching Energy--95μJ (on), 140μJ (off)
Gate Charge--32.7nC
Td on off 25°C--15ns/50ns
Test Condition--480V, 7A, 10 Ohm, 15V
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