STGF7H60DF vs STGF7NB60HDFP vs STGF7NB60S

 
PartNumberSTGF7H60DFSTGF7NB60HDFPSTGF7NB60S
DescriptionIGBT Transistors Trench gate field-stop IGBT, H series 600 V, 7 A high speed
ManufacturerSTMicroelectronicsSTSTMicroelectronics
Product CategoryIGBT TransistorsIC ChipsIGBTs - Single
RoHSY--
TechnologySi--
SeriesSTGF7H60DF-PowerMESH
BrandSTMicroelectronics--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Packaging--Tube
Unit Weight--0.081130 oz
Mounting Style--Through Hole
Package Case--TO-220-3 Full Pack
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-220FP
Configuration--Single
Power Max--25W
Reverse Recovery Time trr---
Current Collector Ic Max--15A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--20A
Vce on Max Vge Ic--1.6V @ 4.5V, 7A
Switching Energy--4.1mJ (off)
Gate Charge--16nC
Td on off 25°C--1.1μs/5.2μs
Test Condition--480V, 7A, 1 kOhm, 5V
Pd Power Dissipation--25 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Collector Emitter Voltage VCEO Max--600 V
Collector Emitter Saturation Voltage--1.2 V
Continuous Collector Current at 25 C--15 A
Gate Emitter Leakage Current--+/- 100 nA
Maximum Gate Emitter Voltage--+/- 20 V
Continuous Collector Current Ic Max--15 A
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