STGIPN3H60 vs STGIPN3H60-E vs STGIPN3H60-H

 
PartNumberSTGIPN3H60STGIPN3H60-ESTGIPN3H60-H
DescriptionIGBT Modules SLIMM Nano 3A 600V 3-Phase IGBT BridgeIGBT ModulesIGBT Modules 3-phase inverter 3A 600V fast IGBT
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT ModulesIGBT ModulesPower Drivers - Modules
RoHSY--
ProductIGBT Silicon ModulesIGBT Silicon ModulesIGBT Silicon Modules
Package / CaseNDIP-26LNDIP-26-
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C+ 125 C
PackagingTube-Tube
SeriesSTGIPN3H60SLLIMMSLLIMM
BrandSTMicroelectronicsSTMicroelectronics-
Mounting StyleThrough HoleThrough HoleThrough Hole
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity476476-
SubcategoryIGBTsIGBTs-
TradenameSLLIMM--
Unit Weight0.242120 oz--
Configuration-3-Phase3 Phase
Collector Emitter Voltage VCEO Max-600 V-
Collector Emitter Saturation Voltage-2.15 V2.15 V
Continuous Collector Current at 25 C-3 A3 A
Gate Emitter Leakage Current---
Pd Power Dissipation-8 W-
Technology-Si-
Maximum Gate Emitter Voltage---
Type--IGBT
Package Case--26-DIP Module (0.846", 21.48mm)
Current--3A
Voltage--600V
Voltage Isolation--1000Vrms
Pd Power Dissipation--8 W
Collector Emitter Voltage VCEO Max--600 V
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