STGP6M65DF2 vs STGP6NC60H vs STGP6N60HD

 
PartNumberSTGP6M65DF2STGP6NC60HSTGP6N60HD
DescriptionIGBT Transistors PTD HIGH VOLTAGEIGBT 600V 15A 56W TO220
ManufacturerSTMicroelectronics--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-220-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.55 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C12 A--
Pd Power Dissipation88 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesSTGP6M65DF2--
Continuous Collector Current Ic Max12 A--
BrandSTMicroelectronics--
Gate Emitter Leakage Current+/- 250 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity1000--
SubcategoryIGBTs--
Unit Weight0.063493 oz--
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