STL40C30H3LL vs STL40C30H3LL/BKN vs STL40DN3LLH

 
PartNumberSTL40C30H3LLSTL40C30H3LL/BKNSTL40DN3LLH
DescriptionMOSFET N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 double island package
ManufacturerSTMicroelectronics-STMicroelectronics
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePowerFLAT-5x6-8--
Number of Channels2 Channel-2 Channel
Transistor PolarityN-Channel, P-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current10 A, 8 A--
Rds On Drain Source Resistance21 mOhms, 30 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge4.6 nC, 12 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation4 W--
ConfigurationDual-Dual
Channel ModeEnhancement--
TradenameSTripFET--
PackagingReel-Digi-ReelR Alternate Packaging
SeriesSTL40C30H3LL-STripFET V
BrandSTMicroelectronics--
Fall Time2.8 ns, 21 ns-2.8 ns
Product TypeMOSFET--
Rise Time22 ns, 15 ns-22 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns, 24 ns--
Typical Turn On Delay Time4 ns, 15 ns--
Package Case--8-PowerVDFN
Operating Temperature---55°C ~ 175°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--PowerFlat (5x6)
FET Type--2 N-Channel (Dual)
Power Max--60W
Transistor Type--2 N-Channel
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--475pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--40A
Rds On Max Id Vgs--18 mOhm @ 5.5A, 10V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--4.5nC @ 4.5V
Pd Power Dissipation--60 W
Vgs Gate Source Voltage--22 V
Id Continuous Drain Current--40 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.5 V
Rds On Drain Source Resistance--16 mOhms
Qg Gate Charge--4.5 nC
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