STP100N10F7 vs STP10 vs STP1007-R15K-LF

 
PartNumberSTP100N10F7STP10STP1007-R15K-LF
DescriptionMOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 150W
ManufacturerSTMicroelectronicsST-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance8 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge56 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation150 W--
ConfigurationSingleSingle-
TradenameSTripFET--
PackagingTubeTube-
ProductPower MOSFET--
SeriesSTP100N10F7N-channel STripFET-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronics--
Fall Time16 ns16 ns-
Product TypeMOSFET--
Rise Time40 ns40 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time46 ns46 ns-
Typical Turn On Delay Time27 ns27 ns-
Unit Weight0.011640 oz0.011640 oz-
Package Case-TO-220-3-
Pd Power Dissipation-150 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-80 A-
Vds Drain Source Breakdown Voltage-100 V-
Vgs th Gate Source Threshold Voltage-2 V to 4 V-
Rds On Drain Source Resistance-8 mOhms-
Qg Gate Charge-56 nC-
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