STP120N4F6 vs STP120N10F4 vs STP120N4F6 120N4F6

 
PartNumberSTP120N4F6STP120N10F4STP120N4F6 120N4F6
DescriptionMOSFET N-Ch 40V 3.5m Ohm 80A STripFET VIMOSFET N-channel 100 V, 9 mOhm, 120 A TO-220 STripFET(TM), POWER MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance4.3 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge65 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation110 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
QualificationAEC-Q101--
TradenameSTripFET--
PackagingTube--
SeriesSTP120N4F6STP120N10F4-
Transistor Type1 N-Channel1 N-Channel-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time20 ns--
Product TypeMOSFETMOSFET-
Rise Time70 ns--
Factory Pack Quantity100050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.011640 oz0.063493 oz-
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