 | |  | |
| PartNumber | STP14N80K5 | STP14NF10 | STP14NF06 |
| Description | MOSFET N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package | MOSFET N Ch 100V 0.115 OHM 15A | |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Tradename | MDmesh | STripFET | - |
| Packaging | Tube | - | - |
| Series | STP14N80K5 | STP14NF10 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.063493 oz | 0.011640 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Id Continuous Drain Current | - | 15 A | - |
| Rds On Drain Source Resistance | - | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Qg Gate Charge | - | 15.5 nC | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 60 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 9.15 mm | - |
| Length | - | 10.4 mm | - |
| Transistor Type | - | 1 N-Channel Power MOSFET | - |
| Width | - | 4.6 mm | - |
| Forward Transconductance Min | - | 20 S | - |
| Fall Time | - | 8 ns | - |
| Rise Time | - | 25 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 16 ns | - |