 | |  | |
| PartNumber | STP75N3LLH6 | STP75N20 | STP75N75 |
| Description | IGBT Transistors MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI | MOSFET N-CH 200V 75A TO-220 | |
| Manufacturer | STMicroelectronics | - | STMicroelectronics |
| Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Series | STP75N3LLH6 | - | N-channel STripFET |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.011640 oz | - | 0.011640 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Package Case | TO-220-3 | - | TO-220-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 60 W | - | 150 W |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 12 ns | - | 14 ns |
| Rise Time | 30 ns | - | 33 ns |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 75 A | - | 78 A |
| Vds Drain Source Breakdown Voltage | 30 V | - | 75 V |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | 4 V |
| Rds On Drain Source Resistance | 5.9 mOhms | - | 11 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 37 ns | - | 61 ns |
| Typical Turn On Delay Time | 9.5 ns | - | 25 ns |
| Qg Gate Charge | 17 nC | - | 76 nC |
| Channel Mode | Enhancement | - | Enhancement |