STP80NF55-06 vs STP80NF55-06FP vs STP80NF55-0

 
PartNumberSTP80NF55-06STP80NF55-06FPSTP80NF55-0
DescriptionMOSFET N-Ch 55 Volt 80 AmpMOSFET N-Ch, 55V-0.005ohms 80A
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220FP-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current80 A60 A-
Rds On Drain Source Resistance6.5 mOhms6.5 mOhms-
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V20 V-
Qg Gate Charge142 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation300 W45 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameSTripFETSTripFET-
Height9.15 mm9.3 mm-
Length10.4 mm10.4 mm-
SeriesSTP80NF55-06STP80NF55-06FPN-channel STripFET
Transistor Type1 N-Channel Power MOSFET1 N-Channel1 N-Channel
TypeMOSFET--
Width4.6 mm4.6 mm-
BrandSTMicroelectronicsSTMicroelectronics-
Forward Transconductance Min150 S--
Fall Time65 ns65 ns65 ns
Product TypeMOSFETMOSFET-
Rise Time155 ns155 ns155 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time125 ns125 ns125 ns
Typical Turn On Delay Time27 ns27 ns27 ns
Unit Weight0.011640 oz0.011640 oz0.011640 oz
Packaging-TubeTube
Package Case--TO-220-3
Pd Power Dissipation--300 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--6.5 mOhms
Forward Transconductance Min--150 S
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