STS7P4LLF6 vs STS7PF30L vs STS7PF30

 
PartNumberSTS7P4LLF6STS7PF30LSTS7PF30
DescriptionMOSFET P-channel 40 V, 0.0175 Ohm typ., 7 A STripFET F6 Power MOSFET in a SO-8 packageMOSFET P-Ch 30 Volt 7 Amp
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOIC-8SOIC-8-
TradenameSTripFET--
PackagingReelReelDigi-ReelR Alternate Packaging
SeriesSTS7P4LLF6STS7PF30LSTripFET II
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Number of Channels-1 Channel1 Channel
Transistor Polarity-P-ChannelP-Channel
Vds Drain Source Breakdown Voltage-30 V-
Id Continuous Drain Current-7 A-
Rds On Drain Source Resistance-21 mOhms-
Vgs Gate Source Voltage-20 V-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-2.5 W-
Configuration-SingleSingle Quad Drain Triple Source
Channel Mode-EnhancementEnhancement
Height-1.65 mm-
Length-5 mm-
Transistor Type-1 P-Channel1 P-Channel
Type-MOSFET-
Width-4 mm-
Fall Time-23 ns23 ns
Rise Time-54 ns54 ns
Typical Turn Off Delay Time-65 ns65 ns
Typical Turn On Delay Time-68 ns68 ns
Unit Weight-0.002998 oz0.002998 oz
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature--150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--MOSFET P-Channel, Metal Oxide
Power Max--2.5W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--2600pF @ 25V
FET Feature--Standard
Current Continuous Drain Id 25°C--7A (Tc)
Rds On Max Id Vgs--21 mOhm @ 3.5A, 10V
Vgs th Max Id--2.5V @ 250μA
Gate Charge Qg Vgs--7nC @ 4.5V
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--7 A
Vds Drain Source Breakdown Voltage--- 30 V
Rds On Drain Source Resistance--21 mOhms
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