STW30N80K5 vs STW30N65M5 vs STW30N20

 
PartNumberSTW30N80K5STW30N65M5STW30N20
DescriptionMOSFET N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a TO-247 packageMOSFET POWER MOSFET N-CH 650V 22 AMOSFET STripFET Power MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage800 V650 V200 V
Id Continuous Drain Current24 A22 A30 A
Rds On Drain Source Resistance150 mOhms139 mOhms65 mOhms
Vgs th Gate Source Threshold Voltage3 V5 V-
Vgs Gate Source Voltage30 V3 V20 V
Qg Gate Charge43 nC64 nC-
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation250 W140 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameMDmeshMDmesh-
PackagingTubeTubeTube
SeriesSTW30N80K5STW30N65M5STW30N20
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Fall Time13.5 ns10 ns8.8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time15 ns8 ns15.7 ns
Factory Pack Quantity60060030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns50 ns38 ns
Typical Turn On Delay Time21 ns50 ns35 ns
Unit Weight0.211644 oz1.340411 oz1.340411 oz
Type-MDmesh V Power MOSFETPower MOSFET
Height--20.15 mm
Length--15.75 mm
Width--5.15 mm
Forward Transconductance Min--20 S
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