STW35N60DM2 vs STW35N60M2-EP vs STW35N60C3

 
PartNumberSTW35N60DM2STW35N60M2-EPSTW35N60C3
DescriptionMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 packageMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current28 A--
Rds On Drain Source Resistance110 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage25 V--
Qg Gate Charge54 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation210 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
SeriesSTW35N60DM2STW35N60M2-EP-
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time10.7 ns--
Product TypeMOSFETMOSFET-
Rise Time17 ns--
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time68 ns--
Typical Turn On Delay Time21.2 ns--
Unit Weight1.340411 oz--
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