 | |  | |
| PartNumber | 2DB1386Q-13 | 2DB1386R-13 | 2DB1386R |
| Description | Bipolar Transistors - BJT 1000W -20Vceo | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | D |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-89-3 | SOT-89-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 20 V | - 20 V | - |
| Collector Base Voltage VCBO | 30 V | - 30 V | - |
| Emitter Base Voltage VEBO | 6 V | - 6 V | - |
| Maximum DC Collector Current | 5 A | - 5 A | - |
| Gain Bandwidth Product fT | 100 MHz | 100 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2DB13 | 2DB13 | - |
| Height | 1.5 mm | 1.5 mm | - |
| Length | 4.5 mm | 4.5 mm | - |
| Packaging | Reel | Reel | - |
| Width | 2.48 mm | 2.48 mm | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| DC Collector/Base Gain hfe Min | 120 | 180 at 500 mA, 2 V | - |
| Pd Power Dissipation | 1000 mW | 1000 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001834 oz | 0.004603 oz | - |
| Collector Emitter Saturation Voltage | - | - 250 mV | - |
| DC Current Gain hFE Max | - | 180 at 500 mA, 2 V | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
2DB1386Q-13 | Bipolar Transistors - BJT 1000W -20Vceo | |
| 2DB1386R-13 | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | ||
| 2DB1386Q-13 | Bipolar Transistors - BJT 1000W -20Vceo | ||
| 2DB1386R-13 | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | ||
| 2DB1386R | 全新原裝 | ||
| 2DB1386R-7 | 全新原裝 |