2N3013

2N3013 vs 2N3013 R vs 2N3013A

 
PartNumber2N30132N3013 R2N3013A
DescriptionBipolar Transistors - BJT NPN Fast SW
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-18-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max15 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT350 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Series2N3013--
Height5.33 mm--
Length5.84 mm--
Width5.84 mm--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min15--
Pd Power Dissipation360 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
製造商 型號 描述 RFQ
Central Semiconductor
Central Semiconductor
2N3013 Bipolar Transistors - BJT NPN Fast SW
2N3013 R 全新原裝
2N3013A 全新原裝
2N3013R 全新原裝
2N3013JAN 全新原裝
2N3013JANTX 全新原裝
ON Semiconductor
ON Semiconductor
2N3013 Bipolar Transistors - BJT NPN Fast SW
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