2N5550TA stock, 2N5550TA, 2N5550TAR


PartNumber	2N5550TAR	2N5550TA
Description	Bipolar Transistors - BJT NPN Si Transistor Epitaxial	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	Y	Y
Mounting Style	Through Hole	Through Hole
Package / Case	TO-92-3 Kinked Lead	TO-92-3 Kinked Lead
Transistor Polarity	NPN	NPN
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	140 V	140 V
Collector Base Voltage VCBO	160 V	160 V
Emitter Base Voltage VEBO	6 V	6 V
Collector Emitter Saturation Voltage	0.25 V	0.25 V
Maximum DC Collector Current	0.6 A	0.6 A
Gain Bandwidth Product fT	300 MHz	300 MHz
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	2N5550	2N5550
DC Current Gain hFE Max	250	250
Height	4.7 mm	4.7 mm
Length	4.7 mm	4.7 mm
Packaging	Ammo Pack	Ammo Pack
Width	3.93 mm	3.93 mm
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild
Continuous Collector Current	0.6 A	0.6 A
DC Collector/Base Gain hfe Min	60	60
Pd Power Dissipation	625 mW	625 mW
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Factory Pack Quantity	2000	2000
Subcategory	Transistors	Transistors
Part # Aliases	2N5550TAR_NL	-
Unit Weight	0.008466 oz	0.008466 oz

Search Part Number : "2N5550TA", Match & Start with "2N5550TA" - Total : 5

製造商	型號	描述
ON Semiconductor / Fairchild	2N5550TAR	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ON Semiconductor / Fairchild	2N5550TA	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
ON Semiconductor	2N5550TAR	TRANS NPN 140V 0.6A TO-92
ON Semiconductor	2N5550TA	Bipolar Transistors - BJT NPN Si Transistor Epitaxial
	2N5550TAR_Q	Bipolar Transistors - BJT NPN Si Transistor Epitaxial

2N5550TA