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| PartNumber | 2N6551 | 2N6550 | 2N6556 |
| Description | Bipolar Transistors - BJT NPN 120Vcbo 60Vceo 6.0Vebo | JFET JFET N-Channel -20V 50mA 400mW 2.3mW | |
| Manufacturer | Central Semiconductor | InterFET | - |
| Product Category | Bipolar Transistors - BJT | JFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-202-3 | TO-46-3 | - |
| Transistor Polarity | NPN | N-Channel | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 375 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2N6551 | 2N6550 | - |
| DC Current Gain hFE Max | 300 at 50 mA, 1 V | - | - |
| Packaging | Bulk | Bulk | - |
| Brand | Central Semiconductor | InterFET | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 25 at 500 mA, 1 V | - | - |
| Pd Power Dissipation | 10 W | 400 mW | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 500 | 1 | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2N6551 PBFREE | - | - |
| Vds Drain Source Breakdown Voltage | - | 10 V | - |
| Vgs Gate Source Breakdown Voltage | - | - 20 V | - |
| Drain Source Current at Vgs=0 | - | 100 mA | - |
| Id Continuous Drain Current | - | 100 uA | - |
| Type | - | JFET | - |
| Forward Transconductance Min | - | 25 mS | - |
| Gate Source Cutoff Voltage | - | - 3 V | - |
