 |  | | |
| PartNumber | 2SA1954BTE85LF | 2SA1954BTE85LFCT-ND | 2SA1954BTE85LFDKR-ND |
| Description | Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO | ||
| Manufacturer | Toshiba | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-323-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 12 V | - | - |
| Collector Base Voltage VCBO | - 15 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 110 mV | - | - |
| Maximum DC Collector Current | - 500 mA | - | - |
| Gain Bandwidth Product fT | 130 MHz | - | - |
| Series | 2SA1954 | - | - |
| DC Current Gain hFE Max | 1000 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 500 mA | - | - |
| DC Collector/Base Gain hfe Min | 300 | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000176 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
2SA1954BTE85LF | Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO | |
| 2SA1954BTE85LF | Bipolar Transistors - BJT PNP Trans -0.5A LN -12V VCEO | ||
| 2SA1954BTE85LFCT-ND | 全新原裝 | ||
| 2SA1954BTE85LFDKR-ND | 全新原裝 | ||
| 2SA1954BTE85LFTR-ND | 全新原裝 |