2SC2713-BL,L

2SC2713-BL,LF vs 2SC2713-BL,LF(T

 
PartNumber2SC2713-BL,LF2SC2713-BL,LF(T
DescriptionBipolar Transistors - BJT NPN Epitaxial Transistor
ManufacturerToshiba-
Product CategoryBipolar Transistors - BJT-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseSOT-346-3-
Transistor PolarityNPN-
ConfigurationSingle-
Collector Emitter Voltage VCEO Max120 V-
Collector Base Voltage VCBO120 V-
Emitter Base Voltage VEBO5 V-
Collector Emitter Saturation Voltage0.3 V-
Gain Bandwidth Product fT100 MHz-
Maximum Operating Temperature+ 125 C-
Series2SC2713-
DC Current Gain hFE Max700-
PackagingReel-
BrandToshiba-
Continuous Collector Current100 mA-
DC Collector/Base Gain hfe Min200-
Pd Power Dissipation150 mW-
Product TypeBJTs - Bipolar Transistors-
Factory Pack Quantity3000-
SubcategoryTransistors-
Unit Weight0.000423 oz-
製造商 型號 描述 RFQ
Toshiba
Toshiba
2SC2713-BL,LF Bipolar Transistors - BJT NPN Epitaxial Transistor
2SC2713-BL,LF TRANS NPN 120V 0.1A S-MINI
2SC2713-BL,LF(T 全新原裝
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